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Kasukabe, Yoshitaka*; Chen, Y.*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*
e-Journal of Surface Science and Nanotechnology (Internet), 9, p.191 - 198, 2011/04
The purpose of this work is to study changes of the crystallographic and electronic structures of Ti films by heating and by nitriding during N-implantation into Ti films, using in-situ transmission electron microscope equipped with the instrument for electron energy loss spectroscopy, and then to clarify the atomistic nitriding processes of Ti thin films due to the N-implantation with the aid of self-consistent charge discrete variational X molecular orbital calculations. It is clarified that the maximum concentration of N in Ti films during the N-implantation and the change of electronic structures near the fermi level, respectively, depend on the implantation temperature and the ratio of N/Ti in Ti films. Furthermore, taking into account the bonding interaction of Ti sublattices with ligand N atoms, the transformation mechanisms between hcp-Ti and fcc-Ti sublattices due to the implantation of N atoms are discussed.
Teraoka, Yuden; Inoue, Keisuke*; Kawakami, Yasunori*; Hiraya, Atsunari*
no journal, ,
The oxidation states of Ni(111) surface, which were made by irradiation of supersonic O molecular beam (SSOMB), were analyzed by synchrotron radiation photoemission spectroscopy (SR-XPS). After irradiation of SSOMB on the Ni(111) surface to some extent, the evolution of surface oxides were observed by core level photoemission spectra of Ni2p and O1s using SR-XPS. The surface temperature was kept to be 300 K during SSOMB irradiation and SR-XPS measurements. The SR energy was 680 eV. Oxygen uptake curves were measured at every translational energy of O beam. Although the sticking probability was almost constant in the range of 0.6 eV to 2.0 eV, the remarkable increase was observed in the region over 2.0 eV. A threshold was found to be 2.0 eV.